Advances in Materials Science and Engineering / 2018 / Article / Fig 8

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 8

Equivalent circuit diagram for a p-n junction with the intermediate layer of high resistance, constructed on the basis of an equivalent circuit pin diode (a) [49] and a simplified scheme for direct (forward bias) and inverse (reverse bias) connection (b).
(a)
(b)

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.