Structural, Optical, and Electrical Characterization of β-Ga₂O₃ Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Table 1

Thickness, roughness, and refractive index at λ = 632.8 nm obtained using the Cauchy model.

Growth temperature (°C)	O2 flux (sccm)	Thickness (nm)	Roughness (nm)	n at 632.8 nm
650	1.0	13.1	0.65	1.864
700	1.0	12.1	0.78	1.868
750	1.0	11.6	1.02	1.876
650	1.5	18.8	0.54	1.875
700	1.5	17.1	0.36	1.879
750	1.5	16.7	0.48	1.873