Advances in Materials Science and Engineering / 2018 / Article / Tab 1

Research Article

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Table 1

Thickness, roughness, and refractive index at λ = 632.8 nm obtained using the Cauchy model.

Growth temperature (°C)O2 flux (sccm)Thickness (nm)Roughness (nm)n at 632.8 nm

6501.013.10.651.864
7001.012.10.781.868
7501.011.61.021.876
6501.518.80.541.875
7001.517.10.361.879
7501.516.70.481.873