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Advances in Materials Science and Engineering
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Advances in Materials Science and Engineering
/
2019
/
Article
/
Tab 2
/
Research Article
Oxide Nanomaterials Based on SnO
2
for Semiconductor Hydrogen Sensors
Table 2
Response (
τ
0,9
) and recovery (
τ
relax
) times to 44 ppm H
2
in air ambient for the 0.24 wt.% Pd/SnO
2
-based sensor at its different operational temperatures.
T
(°С)
225
260
290
325
345
380
400
τ
0,9
(s)
128
29
23
15
12
10
8
τ
relax
(s)
78
28
23
21
15
13
12