Advances in Materials Science and Engineering / 2019 / Article / Tab 2

Research Article

Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors

Table 2

Response (τ0,9) and recovery (τrelax) times to 44 ppm H2 in air ambient for the 0.24 wt.% Pd/SnO2-based sensor at its different operational temperatures.

T (°С)225260290325345380400

τ0,9 (s)12829231512108
τrelax (s)78282321151312

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