Synthesis and Characterization of Gallium Oxide/Tin Oxide Nanostructures via Horizontal Vapor Phase Growth Technique for Potential Power Electronics Application

Table 1

Result of Hall effect and electrical resistivity measurements using van der Pauw method at RT.

Sample	Carrier type	Resistivity ρ (Ω·cm)	Carrier concentration n (cm^−3)	Mobility μ (cm^2/V·s)
A	n	2.62938 × 10^−1	1.1053 × 10^18	21.4752
B	n	2.01757 × 10^−1	2.5791 × 10^18	11.9946
C	n	1.67619 × 10^−1	1.9344 × 10^18	19.2499
D	n	6.94449 × 10^−2	1.2896 × 10^18	69.6956