Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Figure 4

Numerical results on the impact of additional vertical/cross-plane coupling of 3 × 3 GaAs_0.3Sb_0.7 QDs on GaAs arranged in two 3 × 3 square arrays on top of each other with a nominal horizontal QD distance of 2 nm. The nominal vertical QD distance is 2 nm, 22 nm, or 47 nm, respectively. The lines are only guides to the eye. The quantities ΔE_c, ΔE_hh, and ΔE_so denote the energy shifts again, but now only the additional shifts due to vertical coupling. Mean values are given here. For the hh and the so hole energy level shifts, the differences for both central QDs are negligible anyway. But for the conduction band edge shift, the differences are not negligible. Also, the mean values for the wavelength shifts Δλ are shown.