Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Figure 9

Results of photoluminescence (PL) measurements for three different samples, each with 4 QD layers, but double-layer barriers. Each barrier is made from a 5 nm, 10 nm, and 20 nm thick GaAs capsule layer, respectively, and a 40 nm thick Al_0.5Ga_0.5As layer. The QD layers have been grown as described above; see Figure 6.