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Advances in OptoElectronics
Volume 2007 (2007), Article ID 30569, 8 pages
Research Article

Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

Department of Physical Electronics, Tokyo Institute of Technology (TIT), 2-12-1 Ookayama, Meguro-Ku, Tokyo 152-8552, Japan

Received 1 February 2007; Accepted 17 April 2007

Academic Editor: Armin G. Aberle

Copyright © 2007 Seung Yeop Myong. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H-) based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.