PECVD-ONO: A New Deposited Firing Stable Rear Surface Passivation Layer System for Crystalline Silicon Solar Cells

Figure 11

Results of the hydrogen depth profiling using the NRA method. Samples with PECVD-ONO after a variation of thermal treatment are shown: as-deposited, after annealing (425^°C, 15 min), after firing (850^°C, ∼3 s, sample not annealed prior to firing).