PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties
Figure 9
as a function of charge density for a diffused sample with N s≈ 018 cm-3 and PECVD SiNx was deposited at 450°C. The measurements were taken at injection level 015 cm-3 in as-deposited condition and after annealing in different ambient. The lines are fit to the data.
