PECVD Silicon Nitride Passivation on Boron Emitter: The Analysis of Electrostatic Charge on the Interface Properties

Table 1

Flat band voltage and fixed charge density of the PECVD silicon nitride films used in this study as determined from C-V measurements.

Deposition Temperature	As Deposited		Annealed
	𝑉fb (V)	𝑄𝑓(cm^−2)	𝑉fb (V)	𝑄𝑓 (cm^-2)
450°C	−1.92	+6.5×10^11	−1.54	+5.8×10^11
400°C	−1.22	+2×10^11	−1.9	+4.3×10^11