Numerical Modeling and Experimental Investigation of the Nonlinear Polarization Rotation Phenomenon in Semiconductor Optical Amplifiers

Table 2

SOA parameters used in the experimentation.

Symbol	Description	Value
SOA	Reference: 1550 CRI/P-SN 2106
R1	Input facet reflectivity	5 · 10^−5
R2	Output facet reflectivity	5 · 10^−5
L	Active layer length	500 μm
W	Active layer width	2.5 μm
d	Active layer height	0.2 μm
Γ	Optical confinement factor	0.30
𝐺max	Maximum gain at a bias current of 225 mA and input power 𝑃in = −30 dBm	21 dB
B0	Bandwidth at 𝐺max	35 nm
𝑃out^sat	Output saturation power at 𝐺max	15 dBm