New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Figure 1

Cross-sectional view and energy diagrams of the detector: (a) a cross-section of the detector on silicon of p-type with SB from platinum silicide (PtSi/Si); (1): substrate, (2): p⁺ layer, (3): PtSi∖Si layer, (4): antireflection coating; (b) the zone diagram of the detector (𝐸_vac: energy level of vacuum, E_c: bottom of conductance band, E_v: a top (ceiling) of valence band, 𝐸_FS, 𝐸_FM: Fermi energy in the semiconductor and in metal, accordingly, Φ_S, Φ_M: potentials of work function from the semiconductor and metal, Ψ_MS: maximal SB barrier height, and ΔΨ: depression of barrier height at the reverse direction voltage; (c) the dependence of probability of occupancy of energy levels of platinum silicide from electrons energy for three different temperatures of electronic gas.