Review Article
Single-SectionFabry-Perot Mode-Locked Semiconductor Lasers
Table 1
Base wafer epitaxial structure (LM: lattice matched).
| # | Step | Thickness (nm) | Doping | Notes |
| 0 | n+-doped InP substrate | | n+ 1e19 | | 1 | InP buffer | 500 | UID | | 2 | Q1.1 | 115 | UID | LM | 3 | Q1.2 | 115 | UID | LM | 4 | Q1.3 | 122 | UID | LM | 5 | InP ES | 15 | UID | | 6 | Q1.3 | 105 | UID | LM | 7 | InP ES | 15 | UID | | 8 | Active (4QWs) | 85 | UID | bulk (<150), 6QW | 9 | InP clad | 600 | Graded Zn+ to 1e18 | | 10 | Q1.3 cap | 20 | UID | LM | 11 | InP cap | 20 | UID | |
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