Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

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</svg> characteristics of the eutectic Ge-Sb thin film phase-change memory device (a) using a voltage sweeps whilst measuring the current (b) using a current sweep whilst measuring the voltage.</table>

Advances in OptoElectronics

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Figure 7

Figure 7: Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application 