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Advances in OptoElectronics
Volume 2012, Article ID 907560, 23 pages
Review Article

Applications of Fianite in Electronics

1A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow 119991, Russia
2Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, Russia

Received 7 January 2012; Accepted 2 May 2012

Academic Editor: Jung Huang

Copyright © 2012 Alexander N. Buzynin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Fianite or yttrium stabilized zirconia (YSZ) solid solutions single crystals were known worldwide as jewelry material. The review is devoted to novel applications of the material in the field of microelectronics. A number of modern aspects of the application of fianite in micro-, opto- and SHF-electronics were analyzed in this paper. It was demonstrated that fianite is an extremely promising multipurpose material for new electronic technologies due to unique combination of physical and chemical properties. As a substrate and buffer layer for the epitaxy of Si, Ge, GeSi and AIIIBV compounds (GaAs, InGaAs, GaSb, InAs, GaN, AlN), fianite has a number of advantages over the other dielectric materials. The use of fianite (as well as ZrO2 and HfO2 oxides) instead of SiO2 as gate dielectrics in CMOC technology seems to be of peculiar interest. The unique properties of fianite as protecting, stabilizing and antireflecting coatings in electronics and optoelectronic devices have been outlined. A comparative study of the performance characteristics of fianite and conventional materials has been carried out.