Figure 4: Analogy between the capillary epitaxy and graphoepitaxy. (a) Electron microscopy image of GaAs on YSZ at the initial stage of growth (20000x): conventional MOCVD, height of the islets is up to 3000 nm. (b) The capillary epitaxy technique, minimal layer thickness is 50 nm, the layer growth is visible [18]. Optical microscopy image of NH4 J on amorphous Al graphoepitaxy growth: without (c) and with (d) the use of surface-active substances, magnification 100x [24].