Applications of Fianite in Electronics

Table 2

PHEMT heterostructure for FET operating in 10–40 GHz range.

𝑛^+GaAs:Si	𝑛Si∼6×10^18 cm^−3	40 nm
i-Al𝑥Ga1−𝑥As	𝑥∼0.24 (>0.23)	25 nm
i-GaAs		~0.6 nm
δ-Si	𝑛Si∼4.5×10^12 cm^−2
i-GaAs		~0.6 nm
i-Al𝑥Ga1−𝑥As	𝑥∼0.24	4 nm
i-GaAs		1 nm
i-In𝑦Ga1−𝑦As	𝑦∼0.18 (<0.2)	11 nm
i-GaAs		30 nm
i-Al𝑥Ga1−𝑥As	𝑥∼0.24	50 nm
i-GaAs	𝑛<8×10^14 cm^−3	0.5–0.8 𝜇m
CP AlAs/GaAs		(1 nm/2 nm) × 5
GaAs:Sb		100 nm
	Fianite substrate	400 𝜇m