Applications of Fianite in Electronics

Table 3

Parameters of growth and annealing of the fianite-on-Si films.

Sample	𝑇 of growth, C	Annealing, 600 C, 10 min	Film thickness, nm	Substrate
z1	Room	Without annealing	~20	Si ⟨B⟩
z2	Room	Vacuum	~20	Si ⟨B⟩
z3	Room	Oxygen	~20	Si ⟨B⟩
z4	Room	Oxygen	~20	Si ⟨Sb⟩
z5	600	Oxygen	~20	Si ⟨B⟩