Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

<table>Comparison of EL (black) and PL (blue) from the same diode. The energy positions of indirect (0.67 eV) and direct transition from intrinsic Ge (0.8 eV) and n<sup>+</sup>-type doped Ge (0.73 eV) are marked.</table>

Advances in OptoElectronics

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Figure 4

Figure 4: Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes 