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Advances in OptoElectronics
Volume 2013 (2013), Article ID 793253, 10 pages
Research Article

A Comprehensive Analysis of Plasmonics-Based GaAs MSM-Photodetector for High Bandwidth-Product Responsivity

1Department of Electrical and Computer Engineering, Curtin University, Perth, WA 6845, Australia
2Department of Physics, University of Guilan, Rasht 41335-1914, Iran

Received 29 April 2013; Revised 10 August 2013; Accepted 22 August 2013

Academic Editor: Jung Huang

Copyright © 2013 Narottam Das et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A detailed numerical study of subwavelength nanogratings behavior to enhance the light absorption characteristics in plasmonic-based metal-semiconductor-metal photodetectors (MSM-PDs) is performed by implementation of 2D finite-difference time-domain (FDTD) algorithm. Due to the structure design and changes in the device physical parameters, various devices with different geometries are simulated and compared. Parameters like nano-grating height and duty cycle (DC) are optimized for rectangular and taper subwavelength metal nanogratings on GaAs substrate and their impact on light absorption below the diffraction limits are confirmed. The calculated light enhancement is ~32.7-times for an optimized device in comparison with a conventional MSM-PD. This enhancement is attributed to the plasmonic effects in the near-field region.