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Advances in OptoElectronics
Volume 2013, Article ID 804646, 6 pages
http://dx.doi.org/10.1155/2013/804646
Research Article

Germanium Doping to Improve Carrier Mobility in CdO Films

Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sakhir, Bahrain

Received 16 January 2013; Accepted 12 March 2013

Academic Editor: Jianguo Lu

Copyright © 2013 A. A. Dakhel. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This investigation addresses the structural, optical, and electrical properties of germanium incorporated cadmium oxide (CdO : Ge) thin films. The focus was on the improvement in carrier mobility to achieve high transparency for near-infrared light and low resistivity at the same time. The properties were studied using X-ray diffraction, SEM, spectral photometry, and Hall measurements. All CdO : Ge films were polycrystalline with high texture orientation along [111] direction. It was observed that it is possible to control the carrier concentration ( ) and mobility ( ) with Ge-incorporation level. The mobility could be improved to a highest value of  cm2/V·s with Ge doping of 0.25 wt% while maintaining the electrical resistivity as low as  Ω·cm and good transparency % in the NIR spectral region. The results of the present work proved to select Ge as dopant to achieve high carrier mobility with low resistivity for application in transparent conducting oxide (TCO) field. Generally, the properties found make CdO : Ge films particularly interesting for the application in optoelectronic devices like thin-film solar cells.