Germanium Doping to Improve Carrier Mobility in CdO Films

Table 1

The measured electrical parameters (resistivity (𝜌), mobility (𝜇_el), and carrier concentration (𝑁_el)) and bandgap (𝐸_𝑔) for pure and Ge-incorporated CdO films grown on glass substrate.

Sample	𝜌; (×10^−4 Ω·cm)	𝜇el; (cm^2/V·s)	𝑁el; (×10^20 cm^−3)	𝐸𝑔; (eV)
CdO	201	7.03	0.44	2.3
0.10% Ge	20.7	18.97	1.58	2.38
0.19% Ge	4.53	37.37	3.68	2.33
0.25% Ge	2.76	90.70	2.49	2.32
0.27% Ge	6.06	91.5	1.13	2.34
0.31% Ge	33.9	26.4	0.69	2.44