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Advances in OptoElectronics
Volume 2013, Article ID 840931, 12 pages
Research Article

The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of Wz-GaN Reach-Through Avalanche Photodiodes

1Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
2Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata, West Bengal 700009, India

Received 23 November 2012; Accepted 15 January 2013

Academic Editor: Xian Cao

Copyright © 2013 Moumita Ghosh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The authors have made an attempt to investigate the effect of electron versus hole photocurrent on the optoelectric properties of structured Wurtzite-GaN (Wz-GaN) reach-through avalanche photodiodes (RAPDs). The photo responsivity and optical gain of the devices are obtained within the wavelength range of 300 to 450 nm using a novel modeling and simulation technique developed by the authors. Two optical illumination configurations of the device such as Top Mounted (TM) and Flip Chip (FC) are considered for the present study to investigate the optoelectric performance of the device separately due to electron dominated and hole dominated photocurrents, respectively, in the visible-blind ultraviolet (UV) spectrum. The results show that the peak unity gain responsivity and corresponding optical gain of the device are 555.78 mA W−1 and , respectively, due to hole dominated photocurrent (i.e., in FC structure); while those are 480.56 mA W−1 and , respectively, due to electron dominated photocurrent (i.e., in TM structure) at the wavelength of 365 nm and for applied reverse bias of 85 V. Thus, better optoelectric performance of Wz-GaN RAPDs can be achieved when the photocurrent is made hole dominated by allowing the UV light to be shined on the -layer instead of -layer of the device.