The Effect of Electron versus Hole Photocurrent on Optoelectric Properties of 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN Reach-Through Avalanche Photodiodes

Figure 5

Spatial distributions of electron and hole ionization rates in unilluminated 𝑝⁺-𝑝-𝑛-𝑛⁺ Wz-GaN RAPDs near breakdown.