Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers
Figure 1
Top view of the reflective 4-setup (2 plus 2 after reflection) with a spatial frequency filter (slit in front of a mirror); BAL with an emission wavelength of nm, SL: slit, : adjustable slit width, : lens, μm: length of BAL, : external cavity length, : total length, : emitter width, and , , and : reflectivities of the rear facet, the front facet, and the mirror M, respectively.
