Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Figure 12

(a) The structure of the -type GaAs/As hot-hole photodetector. Graded-barrier Al fractions vary from to , while the constant barrier Al fraction is . (b) Schematic of the valence band alignment (including band bending). The offset between the barriers below and above the -GaAs absorber is labeled as .

(a)

(b)