Journals
Publish with us
Publishing partnerships
About us
Blog
Advances in OptoElectronics
Table of Contents
Special Issues
Advances in OptoElectronics
/
2017
/
Article
/
Fig 4
/
Research Article
Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics
Figure 4
The reverse IV of mesa-type APD as a function of temperature over a wide range of 20°C to 145°C.