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Advances in OptoElectronics
Volume 2018 (2018), Article ID 7368175, 5 pages
Research Article

HIT Solar Cells with N-Type Low-Cost Metallurgical Si

1College of Energy, Xiamen University, Xiamen, China
2Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, China

Correspondence should be addressed to Chao Chen and Song He

Received 20 August 2017; Revised 23 November 2017; Accepted 17 December 2017; Published 18 January 2018

Academic Editor: Jung Y. Huang

Copyright © 2018 Xing Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.