| | Parameters | a-Si:H(p) | a-Si:H(i) | c-Si(n) | a-Si:H(n+) |
| | Thickness (nm) | 5 | 5 | 1.7 × 105 | 5 | | Dielectric constant | 11.9 | 11.9 | 11.9 | 11.9 | | Electron affinity (eV) | 3.8 | 3.8 | 4.05 | 3.8 | | Band gap (eV) | 1.70 | 1.74 | 1.12 | 1.70 | | Effective conduction band density | 1.0 × 1020 | 1.0 × 1020 | 2.8 × 1019 | 1.0 × 1020 | | Effective valence band density | 1.0 × 1020 | 1.0 × 1020 | 1.04 × 1019 | 1.0 × 1020 | | Electron mobility (cm2) | 10 | 20 | 1040 | 10 | | Hole mobility (cm2) | 1 | 2 | 412 | 1 | | Acceptor concentration (cm−3) | 1.0 × 1019 | 0 | 5 × 1015 | 0 | | Donor concentration (cm−3) | 0 | 0 | 7.03 × 1015 | 1.0 × 1019 | | Thermal velocity of electrons (cm/s) | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 | | Thermal velocity of hole (cm/s) | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 | 1.0 × 107 | | Layer density | 2.328 | 2.328 | 2.328 | 2.328 | | Band tail density of states () | 2.0 × 1021 | 2.0 × 1021 | | 2.0 × 1021 | | Characteristic energy (eV) for donors, acceptors | 0.045, 0.037 | 0.045, 0.02 | | 0.06, 0.037 | | Capture cross-section for donor states, e, h (cm2) | 1.0 × 10−15, 1.0 × 10−17 | 1.0 × 10−15, 1.0 × 10−17 | | 1.0 × 10−15, 1.0 × 10−17 | | Capture cross-section for acceptor states, e, h (cm2) | 1.0 × 10−17, 1.0 × 10−15 | 1.0 × 10−17, 1.0 × 10−15 | | 1.0 × 10−17, 1.0 × 10−15 | | defect density of states at Gaussian peak energy (eV) | 1.0 × 1017~6.0 × 1019 | 1.0 × 1016~1.0 × 1019 | | 8.0 × 1017~1.0 × 1020 | | Standard deviation (eV) | 1.10, 1.35 | 0.725, 1.025 | | 0.40, 0.65 | | Capture cross-section for donor states, e, h (cm2) | 1.0 × 10−14, 1.0 × 10−15 | 1.0 × 10−14, 1.0 × 10−15 | | 1.0 × 10−14, 1.0 × 10−15 | | Capture cross-section for acceptor states, e, h (cm2) | 1.0 × 10−15, 1.0 × 10−14 | 1.0 × 10−15, 1.0 × 10−14 | | 1.0 × 10−15, 1.0 × 10−14 |
|
|
