Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects
Figure 10
(a) Normalized PL
spectra in CVD grown Si/SiGe 3D NSs showing the PL spectral shift to higher
photon energy under increasing excitation intensity. Each spectrum can be
fitted with two (NP and TO) Gaussian spectral bands, as shown, for example, by
the dashed lines under trace (1). (b) Summary of PL spectra changes as a
function of excitation intensity.
