Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

<table>Integrated EL
intensity over the 0.75–0.95 eV spectral
region of a CVD grown sample as a function of the pulsed voltage amplitude
measured at the indicated temperatures. The dashed straight line is a guide to
the eye.</table>

Advances in Optical Technologies

fig15

Figure 15

Figure 15: Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects 