Table of Contents
Advances in Optical Technologies
Volume 2008 (2008), Article ID 412518, 15 pages
http://dx.doi.org/10.1155/2008/412518
Research Article

Development of Silicon Photonics Devices Using Microelectronic Tools for the Integration on Top of a CMOS Wafer

1CEA-Leti, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France
2Institut d'Electronique Fondamentale, Université Paris-Sud XI, UMR8622, CNRS, Bat. 220, 91405 Orsay Cedex, France
3Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR5270, CNRS, INSA de Lyon, 69621 Villeurbanne, France
4Institut des Nanotechnologies de Lyon, Université de Lyon, INL-UMR5270, CNRS, Ecole Centrale de Lyon, 69134 Ecully, France

Received 6 December 2007; Accepted 13 March 2008

Academic Editor: Pavel Cheben

Copyright © 2008 J. M. Fedeli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Photonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1 dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10 GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5 dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP sources and detector.