Research Article

Quantum Electrodynamic Modeling of Silicon-Based Active Devices

Table 1

Optical properties and simulation parameters of Si-ncs.

Pump wavelength (nm)532

Pump photon flux (cm-2 s-1)1015~1022
Absorption cross-section (cm2)10-14
Emission cross-section (cm2)
Si-nc concentration Ntot (m-3)
Emission wavelength (nm)750
Emission spectrum linewidth (nm)200
(s)10-15
(s)10-5
(s)10-15
Refractive index of Si-ncs
Refractive index of SiO21.454