Table of Contents
Advances in Optical Technologies
Volume 2008, Article ID 682978, 17 pages
Review Article

Photonic Integration on the Hybrid Silicon Evanescent Device Platform

1Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
2Intel Corporation, 2200 Mission College Blvd, SC12-326, Santa Clara, CA 95054, USA

Received 17 December 2007; Revised 25 January 2008; Accepted 12 March 2008

Academic Editor: D. Lockwood

Copyright © 2008 Hyundai Park et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper reviews the recent progress of hybrid silicon evanescent devices. The hybrid silicon evanescent device structure consists of III-V epitaxial layers transferred to silicon waveguides through a low-temperature wafer bonding process to achieve optical gain, absorption, and modulation efficiently on a silicon photonics platform. The low-temperature wafer bonding process enables fusion of two different material systems without degradation of material quality and is scalable to wafer-level bonding. Lasers, amplifiers, photodetectors, and modulators have been demonstrated with this hybrid structure and integration of these individual components for improved optical functionality is also presented. This approach provides a unique way to build photonic active devices on silicon and should allow application of silicon photonic integrated circuits to optical telecommunication and optical interconnects.