Table of Contents
Advances in Optical Technologies
Volume 2012, Article ID 265010, 19 pages
Review Article

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland

Received 15 September 2011; Accepted 23 November 2011

Academic Editor: Rainer Michalzik

Copyright © 2012 Mircea Guina et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb-based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11 W of output power at a wavelength range of 1180–1200 nm and subsequent intracavity frequency doubling to generate yellow-orange radiation with power exceeding 7 W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2–3 μm wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384 fs at 2 μm, the shortest pulses obtained from a semiconductor laser at this wavelength range.