Table of Contents
Advances in Optical Technologies
Volume 2012, Article ID 581743, 9 pages
Research Article

Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Department of Physics, Faculty of Science, Universiti Putra Malaysia, Selangor, 43400 Serdang, Malaysia

Received 23 August 2011; Revised 12 October 2011; Accepted 26 October 2011

Academic Editor: Ci-Ling Pan

Copyright © 2012 Kasra Behzad et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples.