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Advances in Optical Technologies
Volume 2012 (2012), Article ID 581743, 9 pages
Research Article

Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Department of Physics, Faculty of Science, Universiti Putra Malaysia, Selangor, 43400 Serdang, Malaysia

Received 23 August 2011; Revised 12 October 2011; Accepted 26 October 2011

Academic Editor: Ci-Ling Pan

Copyright © 2012 Kasra Behzad et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Raid A. Ismail, “EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES,” Modern Physics Letters B, vol. 27, no. 30, pp. 1350217, 2013. View at Publisher · View at Google Scholar
  • M.B. de la Mora, J. Bornacelli, R. Nava, R. Zanella, and J.A Reyes-Esqueda, “Porous silicon photoluminescence modification by colloidal gold nanoparticles: plasmonic, surface and porosity roles,” Journal of Luminescence, 2013. View at Publisher · View at Google Scholar
  • Sridhar Sampath, Philipp Maydannik, Tatiana Ivanova, Marina Shestakova, Tomáš Homola, Anton Bryukvin, Mika Sillanpää, Rameshbabu Nagumothu, and Viswanathan Alagan, “Efficient solar photocatalytic activity of TiO2 coated nano-porous silicon by atomic layer deposition,” Superlattices and Microstructures, 2016. View at Publisher · View at Google Scholar
  • Kasra Behzad, Wan Mahmood Mat Yunus, Afarin Bahrami, Alireza Kharazmi, and Nayereh Soltani, “Synthesis and characterization of silicon nanorod on n-type porous silicon,” Applied Optics, vol. 55, no. 9, pp. 2143, 2016. View at Publisher · View at Google Scholar