Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

<table><svg height="18.725" id="M52" style="vertical-align:-2.3205pt" version="1.1" viewbox="0 0 45.6875 18.725" width="45.6875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,15.775)"><path d="M300 -147l-18 -23q-106 71 -159 185.5t-53 254.5v1q0 139 53 252.5t159 186.5l18 -24q-74 -62 -115.5 -173.5t-41.5 -242.5q0 -130 41.5 -242.5t115.5 -174.5z" id="x28"></path></g><g transform="matrix(.017,0,0,-.017,5.944,15.775)"><path d="M545 106q-67 -118 -134 -118q-24 0 -40 37.5t-30 129.5h-2q-47 -72 -103 -119.5t-108 -47.5q-47 0 -76 45.5t-29 119.5q0 113 85 204t174 91q47 0 70 -33.5t43 -119.5h3q32 47 80 140l55 13l10 -9q-47 -80 -138 -201q17 -99 27.5 -136t22.5 -37q23 0 69 61zM333 204
q-14 98 -31 149.5t-50 51.5q-49 0 -94 -70t-45 -164q0 -55 15.5 -86t40.5 -31q70 0 164 150z" id="x1D6FC"></path></g><g transform="matrix(.017,0,0,-.017,15.599,15.775)"><path d="M499 88q-41 -46 -83.5 -73t-68.5 -27q-41 0 -19 98l52 225q10 43 8 59.5t-16 16.5q-37 0 -112 -65t-117 -135q-14 -42 -38 -179q-36 -7 -75 -20l-7 8l127 594q8 40 2.5 49t-35.5 9h-35l5 25q36 3 71.5 13t56.5 18t25 8q11 0 3 -38l-88 -417h2q77 102 195 167q44 24 79 24
q61 0 30 -130l-52 -220q-8 -33 4 -33q8 0 31 14.5t43 33.5z" id="x210E"></path></g><g transform="matrix(.017,0,0,-.017,24.371,15.775)"><path d="M509 373q0 -52 -42.5 -118.5t-124.5 -159.5l-94 -107h-27q-22 209 -78 342q-21 48 -41 48q-18 0 -63 -62l-22 21q77 111 125 111q30 0 52 -21.5t38 -75.5q37 -130 52 -285q48 62 74.5 99.5t53.5 87t27 76.5q0 43 -17 60q-5 5 -5 15q0 17 12.5 30.5t28.5 13.5
q21 0 36 -22.5t15 -52.5z" id="x1D708"></path></g><g transform="matrix(.017,0,0,-.017,33.414,15.775)"><path d="M275 270q0 -296 -211 -440l-19 23q75 62 116.5 174t41.5 243t-42 243t-116 173l19 24q211 -144 211 -440z" id="x29"></path></g>
<g transform="matrix(.012,0,0,-.012,39.3,7.613)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg> versus <svg height="12.4375" id="M53" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 17.9375 12.4375" width="17.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,0,0,-.017,.062,12.163)"><path d="M499 88q-41 -46 -83.5 -73t-68.5 -27q-41 0 -19 98l52 225q10 43 8 59.5t-16 16.5q-37 0 -112 -65t-117 -135q-14 -42 -38 -179q-36 -7 -75 -20l-7 8l127 594q8 40 2.5 49t-35.5 9h-35l5 25q36 3 71.5 13t56.5 18t25 8q11 0 3 -38l-88 -417h2q77 102 195 167q44 24 79 24
q61 0 30 -130l-52 -220q-8 -33 4 -33q8 0 31 14.5t43 33.5z" id="x210E"></path></g><g transform="matrix(.017,0,0,-.017,8.834,12.163)"><path d="M509 373q0 -52 -42.5 -118.5t-124.5 -159.5l-94 -107h-27q-22 209 -78 342q-21 48 -41 48q-18 0 -63 -62l-22 21q77 111 125 111q30 0 52 -21.5t38 -75.5q37 -130 52 -285q48 62 74.5 99.5t53.5 87t27 76.5q0 43 -17 60q-5 5 -5 15q0 17 12.5 30.5t28.5 13.5
q21 0 36 -22.5t15 -52.5z" id="x1D708"></path></g>
</svg> and its linear fitting line for a PSi sample.</table>

Advances in Optical Technologies

fig8

Figure 8

Figure 8: Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method 