Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Table 1

Porosity and thickness of samples.

Sample no.	Substrate	Current density (mA/cm^2)	Etching time (min)	Porosity (%)	Thickness (μm)
1	p-Si	30	10	62.37	11.53
2	p-Si	30	20	72.02	22.84
3	p-Si	30	30	76.72	33.35
4	p-Si	30	40	79.13	45.00
5	p-Si	30	50	79.68	57.21
6	p-Si	30	60	80.20	69.20