Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Table 3

Comparison of the Band gap values extract from Photoluminescence and UV-Vis-NIR spectroscopy.

Sample/Sample number	Porosity (%)	Band gap (eV)
		PL	UV-Vis-NIR
Si	—	1.14 (as literature)	1.09
1	62.37	1.88	1.87
2	72.02	1.92	1.89
3	76.72	1.97	1.94
4	79.13	2.01	1.98
5	79.68	2.05	2.01
6	80.20	2.11	2.09