Dependence of the RT (18°C) CW threshold currents of the 1.3 μm top-emitting In(Ga)As/GaAs quantum-dot GaAs-based OC VCSELs on diameters of their active regions: crosses: experimental points and dash line: simulation curve. Exactness of the diameter seems to be not better than about 2 μm because a final shape of an oxide aperture is not a perfect circle, but it resembles rather an ellipse.
