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Advances in Optical Technologies
Volume 2012 (2012), Article ID 754546, 11 pages
Review Article

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

Received 27 June 2012; Accepted 4 September 2012

Academic Editor: Marija Strojnik

Copyright © 2012 Masahiko Kondow and Fumitaro Ishikawa. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This paper presents the reproducible growth of high-quality GaInNAs by molecular beam epitaxy. Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al is unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant incorporation of O and C. A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N2 gas causes the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate. Hence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional impurities, resulting in a highly pure epitaxial layer.