Table of Contents
Advances in Optical Technologies
Volume 2015 (2015), Article ID 236014, 8 pages
http://dx.doi.org/10.1155/2015/236014
Research Article

GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing

1Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
2Nanophotonic Research Center, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

Received 5 August 2014; Revised 6 November 2014; Accepted 10 November 2014

Academic Editor: Gilles Lerondel

Copyright © 2015 Jun Hyoung Kim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.