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Research Letters in Physical Chemistry
Volume 2008, Article ID 760650, 5 pages
http://dx.doi.org/10.1155/2008/760650
Research Letter

Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

C. G. Jin,1,2 X. M. Wu,1,2 and L. J. Zhuge2,3

1Department of Physics, Suzhou University, Suzhou 215006, China
2The Key Laboratory of Thin Films of Jiangsu, Suzhou University, Suzhou 215006, China
3Analysis and Testing Center, Suzhou University, Suzhou 215006, China

Received 16 January 2008; Accepted 7 March 2008

Academic Editor: Igor Murin

Copyright © 2008 C. G. Jin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Silicon carbide (SiC) films were prepared by single and dual-ion-beam sputtering deposition at room temperature. An assisted A r + ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from 𝑎 -SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the 𝑠 𝑝 2 bonded clusters reduces, and the 𝑎 -Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.