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ElectroComponent Science and Technology
Volume 3 (1976), Issue 1, Pages 51-62

An Experimental Investigation of the Dielectric Properties of Thermally Evaporated Rare Earth Oxides for Use in Thin Film Capacitors

1Department of Physics, Auburn University, Auburn, Alabama 36830, USA
2189 Grandview Avenue, Valparaiso, Florida 32580, USA

Received 25 July 1975; Accepted 30 January 1976

Copyright © 1976 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


An experimental survey of rare earth oxides for use in thin film capacitors has been completed. Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown strengths in excess of 5 × 106 V/cm were observed. Relative dielectric constants measured for the oxides range from two to twenty, and measured capacitances were as high as 156 × 10−9 F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the most promise as potential materials for use in thin film capacitors.