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ElectroComponent Science and Technology
Volume 4 (1977), Issue 3-4, Pages 133-137

Reactive Sputtering of NiCr Resistors With Closely Adjustable Temperature Coefficient of Resistance

Siemens AG, München BRD, Germany

Received 1 May 1977

Copyright © 1977 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by reactive sputtering in an Ar-atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.

Resistor networks with a solderable conductor pattern of TiPdAu have a TCR of 0±7 ppm/K and a long term resistance drift ≤ 2‰ in the first 1,000 hours at 125°C.