Abstract
The generation and processing of data signal sequences in the gigabit range make high demands on circuitry and technology. For this high-speed thick-film switching circuits have proved successful. With a suitable circuitry, which is tailored to both the requirements of the subnanosecond range and the conditions of the thick-film technique, it is possible to solve many problems connected with the generation and processing of data signals in the gigabit range.The conventional method of series-to-parallel conversion with shift registers can, however, not be applied at justifiable costs with the present-day components. Therefore signal processing at the receiving end by bit error rate measuring equipment at bit rates from 640 Mbit/s up to 1,28 Gbit/s is used to demonstrate hybrid-integrated thick-film circuits which, in connection with coaxial and strip lines, allow the series-to-parallel conversion of high bit rates.The principle applied here uses lines as storing elements and high speed gates as switches. By supplying the data signal as well as the shift and sampling clocks in a serial mode, it is possible to obtain a geometrically linear arrangement of the thick-film circuits so that problems of clock supply and differing signal delays can be excluded. The combination of a few extremely high-speed thick-film circuits with commercial monolithic circuits allows series-to-parallel conversions to be performed in a simple, reliable and flexible way and in any conversion ratio.