Abstract

By assuming that the scattering processes from other sources than grain-boundaries can be described by a single relaxation time τ∗ and then by solving a Boltzmann equation in which grain-boundary scattering is accounted for, we have obtained an analytical expression for the thin monocrystalline film conductivity in terms of the reduced thickness k and the grain-boundary reflection coefficient r. Numerical tables are given to show the agreement of the above expression with the Mayadas-Shatzkes expression.