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ElectroComponent Science and Technology
Volume 5 (1978), Issue 3, Pages 159-164

Time Dependence of Ion-Migration Effects in NiCr Resistor Films

1Thin Film Electronics Department, BALZERS AG, Balzers, FL-9496, Liechtenstein
2Sandvik AB, Coromant Factory, Stockholm 42 S-12612, Sweden

Received 4 November 1977; Accepted 27 February 1978

Copyright © 1978 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper reports the effects of ion-migration on NiCr-resistor films sputtered on the substrates Corning 0211 and 7059. Graphs showing the influence of magnitude and polarity of the bias potential, of the separation between resistor and counter-electrode, and of reversal of bias polarity are given for Corning 0211 substrates at a temperature of 100℃ and in a relative humidity of 0.7% for periods of time ranging up to 1000 hours. Results for resistors having a NiCr-oxide layer between the film and the Corning 0211 substrate as well as for NiCr resistors on Corning 7059 substrate are also presented. Previous use of a bias-electrode at positive potential is shown to lead to a depletion-recovery effect. The physical interpretation of the experimental features is given in terms of a model involving anodic oxidation at the positive electrode and formation of a low conductivity deposit at the negative electrode.